一、个人简介

闫小兵，教授，硕士生导师，河北省杰青、河北省优青获得者，于南京大学博士毕业，2014-2016于新加坡国立大学担任Research Fellow职位。担任河北大学电子信息工程学院副院长。美国IEEE会员，APL、Semicon. Sci. and Tech.等杂志审稿人。E-Mail: xiaobing_yan@126.com

二、研究方向

新型Flash存储器、阻变存储器、忆阻器等新型电子器件集成和用于集成的逻辑控制嵌入式电路设计研究，面向人工神经网络的忆阻器阵列研究。

三、近年来主持与参与的代表性科研项目

[1] 国家自然基金项目（面上项目）：基于超薄BiFeO3隧道结忆阻器的制备与类脑行为及其物理机制研究，61674050，主持

[2] 国家自然基金项目：用于电子突触的"模拟"型忆阻器制备方法及特性机理研究， 61306098，主持

[3] 博士后项目：离子注入掺杂简单氧化物阻变特性研究， 2013M530754,主持

[3] 河北省自然基金项目：含铜或银电极铁酸铋薄膜阻变存储特性研究，E2012201088，主持

[4] 河北省杰出青年基金：新型忆阻器的制备、微结构调控及突触可塑性物理机制，A2018201231,主持

[5] 河北省教育厅重点项目：基于钛酸锶钡薄膜中氧空位分布与浓度调控的阻变存储特性研究，ZH2012019，主持

[6] 河北省高等学校青年拔尖人才计划项目：基于纳米晶Si/Ag+Si复合薄膜的“模拟”型忆阻器特性研究，BJ2014008.

[7] 保定市科技局项目：基于钛酸锶薄膜阻变开关性能研究， 11ZG030,主持

[8] 河北大学教改项目:以就业为导向的实验课程与教学内容体系改革研究与实践.申请人:闫小兵、马蕾、师建英、高春霞、娄建忠，JX08-ZD-14

[9] 河北省省级本科创新项目指导老师：新型flash存储器原型器件研究。

[10] 河北大学研究生创新资助项目指导老师：研究生：李玉成，界面互扩散层对电荷俘获储存器性能的研究

[11] 国家自然基金面上项目：基于氧化物薄膜晶体管的不挥发性DRAM技术研究，61376112,主研

[12] 国家自然基金面上项目：适于三维集成的阻变存储器选通管技术研究，61474136，主研

[13] 国家自然基金面上项目：银锗硒（碲）玻璃体系固体电解质阻性存储特性研究，51072078，主研

[14] 国家自然基金：超细纳米晶FePt薄膜的L10有序化转变研究，50801020，主研

[15] 863探索性项目，“高密度存储与磁电子材料关键技术”， 2014AA032901，子课题名称：高速低功耗的阻变存储器材料与器件关键技术

四、近年来公开发表学术论文(部分第一作者、通讯作者文章)

[1] Xiaobing Yan,* Jianhui Zhao, Sen Liu, Zhenyu Zhou, Qi Liu,* Jingsheng Chen, and Xiang Yang Liu* Memristor with Ag-Cluster-Doped TiO2 Films as Artificial Synapse for Neuroinspired Computing. Adv. Funct. Mater. 2017, 1705320.(JCR1区,影响因子12.124)

[2] Yao Xing, Chenyang Shi, Jianhui Zhao, Wu Qiu, Naibo Lin, Jingjuan Wang, Xiao Bing Yan,* Wei Dong Yu, and Xiang Yang Liu*, Mesoscopic-Functionalization of Silk Fibroin with Gold Nanoclusters Mediated by Keratin and Bioinspired Silk Synapse. Small 2017, 1702390.(JCR1区,影响因子8.643)

[3] Xiaobing Yan*, Zhenyu Zhou, Bangfu Ding, Jianhui Zhao and Yuanyuan Zhang. Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure. J. Mater. Chem. C, 2017, 5, 2259.(JCR1区,影响因子5.256)

[4] Xiaobing Yan*, Zhenyu Zhou, Jianhui Zhao, Qi Liu*, Hong Wang, Guoliang Yuan, and Jingsheng Chen. Flexible memristors as electronic synapses for neuroinspired computation based on scotch tape-exfoliated mica substrates. Nano Research. 2018, 11(3): 1183–1192(JCR1区)

[5] Xiaobing Yan*, Lei Zhang, Yongqiang Yang, Zhenyu Zhou, Jianhui Zhao, Yuanyuan Zhang, Qi Liu and Jingsheng Chen. Highly improved performance in Zr0.5Hf0.5O2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory. J. Mater. Chem. C.2017, 5(42): 11046-11052.(JCR1区)

[6] Yuanyuan Zhang, Tao Yang, Xiaobing Yan*, Zichang Zhang, Gang bai, Chao Lu, Xinlei Jia, Bangfu Ding, Jianhui Zhao, and Zhenyu Zhou. A metal/Ba0.6Sr0.4TiO3/SiO2/Si single film device for charge trapping memory towards a large memory window. APPLIED PHYSICS LETTERS 2017, 110, 223501.(JCR2区)

[7] Xiaobing Yan*, Yucheng Li, Jianhui Zhao, and Zhenyu Zhou. Bistable Capacitance Performance-Induced Ambipolar Charge Injected Based on Ba0.6Sr0.4TiO3 by an Inlaid Zr–Hf–O Layer for Novel Nonvolatile Memory Application. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64, 587. (JCR3区)

[8] Xiaobing Yan∗, Tao Yang, Xinlei Jia, Jianhui Zhao, Zhenyu Zhou. Impacts of thermal annealing temperature on memory properties of charge trapping memory with NiO nano-pillars. Physics Letters A 2017, 381, 913–916.(JCR3区)

[9] Xiaobing Yan, Yucheng Li, Jianhui Zhao, Yan Li, Gang Bai and Siqi Zhu Roles of grain boundary and oxygen vacancies in Ba0.6Sr0.4TiO3 films for resistive switching device application. Appl. Phys. Lett. 108, 033108 (2016); (JCR2区,影响因子3.8).

[10] (2 Zhen Fan, Jinyu Deng, Jingxian Wang, Ziyan Liu, Ping Yang, Juanxiu Xiao, Xiaobing Yan, Zhili Dong, John Wang and Jingsheng Chen，Ferroelectricity emerging in strained (111)-textured ZrO2 thin films. Appl. Phys. Lett. 108, 012906 016). (JCR2区,影响因子3.8)

[11] Xiaobing Yan, Erpeng Zhang, Hua Hao, Yingfang Chen,Gang Bai, Qi Liu, Jianzhou Lou, Baoting Liu, and Xiaoting Li Highly transparent bipolar resistive switching memory in Zr0.5Hf0.5O2 films with amorphous semiconducting In-Ga-Zn-O as electrode. IEEE Transactions on Electron Devices，62（10）,3244-3249（2015）(JCR2区,影响因子2.8)

[12] Xiaobing Yan, Yucheng Li, Jianhui Zhao, Yidong Xia, Minglong Zhang, Zhiguo Liu. Resistive switching model change induced by electroforming in α-Fe2O3 films. Physics Letters A，379(38), 2392–2395(2015).

[13] X. B. Yan*,Y. D. Xia, H. N. Xu X. Gao H. T. Li，R. Li, J. Yin, and Z. G. Liu*.Effects of the electroforming polarity on bipolar resistive switching characteristics of SrTiO3−δ films. Applied. Physics. Letters, 97 112101-3 (2010）.（google学术引用57次，JCR2区,影响因子3.8)

[14] X. B. Yan*,Y. F. Chen,H. Hao,Q. Liu,E. P. Zhang,S. S. ShiandJ. Z. Lou.Tristateelectrochemical metallization memory based in the hydrogenated nanocrystalline silicon films, Applied. Physics. Letters105, 072104 (2014). (JCR2区,影响因子3.8)

[15] X. B. Yan*,H. Hao,Y. F. Chen,Y. C. LiandW. Banerjee.Highly transparent bipolarresistiveswitchingmemory with In-Ga-Zn-O semiconducting electrode in In-Ga-Zn-O/Ga2O3/In-Ga-Zn-O structure. Applied. Physics. Letters 105, 093502(2014)(JCR2区,影响因子3.8)

[16] X. B. Yan*, K. Li, J. Yin, Y. D. Xia, H. X. Guo, L. Chen and Z. G. Liu*, The Resistive Switching Mechanism of Ag/SrTiO3/Pt Memory Cells，Electrochemical and Solid-State Letters, 13, H87-H89 (2010). (JCR2区,影响因子2.5，引用20次)

[17] *Xiaobing Yan, Hua Hao, Yingfang Chen, Shoushan Shi, Erpeng Zhang, Jianzhong Lou and Baoting Liu, Self-rectifying performance in the sandwichedstructure of Ag/In-Ga-Zn-O/Pt bipolar resistiveswitching memory,Nanoscale Research Letters 2014, 9:548. (JCR2区,影响因子2.8)

[18] *X. B. Yan, J. Yin, H. X. Guo，Y. Su, B. Xu, H.T. Li, D. W. Yan, D. W. Yan, Z. G. Liu*. Bipolar resistive switching performance of the nonvolatile memory cells based on (AgI)0.2(Ag2MoO4 )0.8 solid electrolyte films, Journal of Applied Physics,106, 054501-5 (2009).

[19] Zhou, PL; Zheng, SK ; Tian, Y ; Zhang, SM; Shi, RQ; He, JF; Yan, XB, First principles calculation of dielectric properties of Al and N codoped3C-SiC. ACTA PHYSICA SINICA 63（5）,053102,Mar2014.

[20] He, JF; Zheng, SK; Zhou, PL; Shi, RQ; Yan, XB. First-principles calculations on the electronic and optical properties of ZnO codoped with Cu-Co. ACTA PHYSICA SINICA 63（4）,046301,Feb（2014）.

[21] B. T. Liu* (硕士导师), X. B. Yan, Y. N. Guo, C. S. Cheng, F.Li, X. Zhang, F. Bian, and X. Y. Zhang，“Influence of crystallinity on the oxidation resistance of Ni-Al film used as diffusion barrier layer”，J. Phys. D: Appl. Phys. 42 0654191-5 (2009). (JCR2区,影响因子2.7)

[22] B. T. Liu* (硕士导师), X. B. Yan, X. Zhang, Y, Zhou, F. Bian and X. Y. Zhang，“Investigation of oxidation resistance of Ni-Ti film used as oxygen diffusion barrier layer”, Applied Surface Science 255 6179–6182 (2009) .(影响因子2.7)

[23] B. T. Liu* (硕士导师), X. B. Yan, X Zhang, C. S. Cheng, F. Li, F. Bian, Q. X. Zhao, Q. L. Guo, and Y. L. Wang, X. H. Li and X. Y. Zhang, C. R. Li, Y. S. Wang. Barrier performance of ultrathin Ni–Ti film for integrating ferroelectric capacitors on Si. Applied. Physics. Letters, 91 142908-3 (2007).(JCR2区,影响因子3.8.引用25次)

[24] X. B. Yan, Z.G. Liu*, J. Yin，X. Y. Xia, Studies on the reset power needed for the unipolar resistive switching in amorphous SrTiO3−δ films induced by electrical pulse, Phys. Letters A, 375, 3599-3603(2011).

[25] GangBai,ZhiguoLiu, XiaobingYan,ChangchunZhang, Impact of thermal stress on the piezoelectric and dielectric properties of PbTiO3 thick films on various substrates, Journal of Applied Physics  116, 054103(2014)

[26] Guoming Wang, Shibing Long, Zhaoan Yu, Meiyun Zhang, Yang Li, Dinglin Xu, Hangbing Lv, Qi Liu, Xiaobing Yan, Ming Wang, Xiaoxin Xu, Hongtao Liu, Baohe Yang, Ming Liu，Impact of program/erase operation on the performances of oxide-based resistive switching memory.Nanoscale Research Letters 2015, 10:39

五、近年来公开发表学术论文(部分第一作者、通讯作者文章)

[1]国洪轩、闫小兵、高立刚、殷江，刘治国，固体电解质银锗氧薄膜和制备方法及其应用,授权号：ZL 200810155732.2

[2]闫小兵，贾长江，陈英方等，一种阻变存储元件及其制备方法，授权号：2013104428610

[3]闫小兵，郝华，等，一种透明阻变存储器及其制备方法，授权号：201310200068.X

[4]闫小兵，张二鹏，等，一种透明阻变存储器及其制备方法，授权号：201310201770.8

[5]卢年端，李泠，刘明，闫小兵，吕杭炳，孙鹏霄，“一种测量阻变存储器状态密度的方法”，专利号：201410270200.9。

[6]中国专利，闫小兵(#)(*)，陈英方，郝华，娄建忠，一种纳米级三态阻变存储器及其制备方法，授权，2016.10.05，ZL201410230154.X

[7]中国专利，闫小兵，李玉成 一种电荷俘获存储器及其制备方法， 授权号：ZL 2015 1 0264942.5

已申请国家专利：

[8]闫小兵，等，一种双极阻变存储器件及其制备方法，申请号：201310148694.9

六、获奖情况

2017.6”新型非挥发性阻变存储器特性和机理研究”获得保定市科技进步一等奖

七、培养研究生情况

2015届研究生郝华获得河北省优秀毕业生,国家奖学金,到联通工作,陈英方获得三等奖学金，公务员；

2016届研究生李玉成获得国家奖学金，去中车集团工作。李岩去中芯国际公司工作。就业前景好，毕业生到中国中车股份有限公司、中芯国际、中国联通、北方微电子、电子科技集团、北京燕京微电子著名等企业工作。成绩优秀的同学也可推荐出国学习。

八、外联工作

课题组与南京大学、清华大学、北京大学微电子所、中国科学院微电子研究所、中科院半导体所、新加坡国立大学、美国加州大学圣塔芭芭拉分校等著名研究单位建立长期稳定的合作关系。